8/20 1 4 J270, j271 p - channel silicon junction field - effect transistor ? analog switch ? sample and hold ? low noise, high gain amplifier a bsolute maximum ratings at t a = 25 o c reverse gate sou rce & gate drain voltage - 3 0v continuous forward gate curr ent 5 0 ma continuous devi ce power dissipation 3 6 0 mw power derating 2 .8 mw/ o c at 25 o c free air temperature J270 j271 process pj99 static electrical characteristics min max min max unit tes t conditions gate source breakdown voltage v (br)gss - 30 - 30 v i g = 1 ua, v ds = 0 v gate reverse current i gss 200 200 pa v gs = 10 v, v ds = 0 v gate source cutoff voltage v gs(off) 0.5 2 1.5 4.5 v v ds = - 10 v, v gs = 0 v drain saturation cu rrent (pulsed) i dss - 2 - 15 - 6 - 50 ma v ds = - 10 v, v gs = 0 v dynamic electrical characteristics common - source forward transconductance g fs 6 15 8 18 ms v ds = - 10 v, v gs = 0 v f = 1 khz common - source input capacitance c iss 32 32 pf v ds = - 1 0 v, v gs = 0 v f = 1 mhz common - source reverse transfer capacitance c rss 4 4 pf v ds = - 10 v, v gs = 0 v f = 1 mhz typical equivalent short circuit input noise voltage ~e n 6 6 nv/hz v ds = 10 v, i d = 5 ma f = 1 khz www.interfet.com 715 n. glenville dr., ste. 400 richardson, tx 75089 (972) 238 - 9700 fax (972) 238 - 5338 smp2608, smp2609 smpJ270, smpj271
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